Atomic steps on Si(100) surfaces

Martin, J. A. and Aumann, C. E. and Savage, D. E. and Tringides, Michael C. and Lagally, Max G. and Moritz, Wolfgang and Kretschmar, F. (1987): Atomic steps on Si(100) surfaces. In: Journal of Vacuum Science & Technology A, Vol. 5, No. 4: pp. 615-618

Abstract

It is demonstrated that surface-sensitive electron diffraction measurements of steps on singular, but rough Si(100) surfaces are subject to a multiple-scattering effect that can be misinterpreted as double-atomic-height steps. It is shown that only single-height steps are present. This phenomenon can occur in any surface in which adjacent terraces have different terrace structure factors. Determination of terrace sizes can be influenced; however, they can be accurately made if the diffraction geometry is chosen appropriately. Possible terrace shape effects may also be inherent in the diffraction data.

• Item Type: Article
• Collections: Geosciences
• Subjects: 500 Science > 550 Earth sciences and geology