Semiconductor-half metal transition at the Fe3O4(001) surface upon hydrogen adsorption

Parkinson, Gareth S.; Mulakaluri, Narasimham; Losovyj, Yaroslav; Jacobson, Peter; Pentcheva, Rossitza und Diebold, Ulrike (2010): Semiconductor-half metal transition at the Fe3O4(001) surface upon hydrogen adsorption. In: Physical Review B, Bd. 82, Nr. 12

Abstract

The adsorption of H on the magnetite (001) surface was studied withphotoemission spectroscopies, scanning tunneling microscopy, anddensity-functional theory. At saturation coverage the insulating (root 2x root 2)R45 degrees reconstruction is lifted and the surface undergoesa semiconductor-half metal transition. This transition involves subtlechanges in the local geometric structure linked to an enrichment of Fe2+cations at the surface. The ability to manipulate the electronicproperties by surface engineering has important implications formagnetite-based spintronic devices.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Geowissenschaften > Department für Geo- und Umweltwissenschaften > Kristallographie und Materialwissenschaft
• Themengebiete: 500 Naturwissenschaften und Mathematik > 530 Physik ; 500 Naturwissenschaften und Mathematik > 540 Chemie ; 500 Naturwissenschaften und Mathematik > 550 Geowissenschaften, Geologie
• Sprache: Englisch