Structure, Stability, and Origin of (2×n) Phases on Si(100)

Martin, J. A.; Savage, D. E.; Moritz, Wolfgang und Lagally, Max G. (1986): Structure, Stability, and Origin of (2×n) Phases on Si(100). In: Physical Review Letters, Bd. 56, Nr. 18: S. 1936-1939

Abstract

Phases with (2×n) structure (6<n<10) can be formed on Si(100) by rapid quenching from high temperatures. The nominal (2×7) phase has been investigated by high-resolution low-energy electron diffraction. The structure involves two atomic levels, is metastable, and decays with first-order kinetics. The structure can be explained by ordering of excess missing-dimer defects, which apparently are present on the surface with any of the standard surface preparation techniques for Si(100).

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Geowissenschaften > Department für Geo- und Umweltwissenschaften > Kristallographie und Materialwissenschaft
• Themengebiete: 500 Naturwissenschaften und Mathematik > 550 Geowissenschaften, Geologie
• Sprache: Englisch