Abstract
Direct printing of nanogap-separated metallic contact pairs is described that enables novel nanoelectronic device architectures. Nanotransfer printing (nTP) stamps are grown by molecular beam epitaxy involving layered III-V semiconductors that are selectively etched. Finished stamps comprise both the nanoscale surface trench that becomes the nanogap on printing and a microscale, predetermined geometry that affords the simultaneous integration of contact pads for external electrical testing. This nTP technique is well suited for top-contacting sensitive thin films for electrical characterization;a typical electrode configuration is illustrated by transfer-printed 13 nm thin metal films that are separated by an electrically insulating gap of ca. 30 nm.
| Item Type: | Journal article |
|---|---|
| Research Centers: | Center for NanoScience (CENS) |
| Subjects: | 500 Science > 500 Science |
| ISSN: | 2166-2746 |
| Language: | English |
| Item ID: | 84184 |
| Date Deposited: | 15. Dec 2021 15:10 |
| Last Modified: | 15. Dec 2021 15:10 |
