Abstract
Cs2AgBiBr6 has attracted much interest as a potential lead-free alternative for perovskite solar cells. Although this material offers encouraging optoelectronic features, severe bottlenecks limit the performance of the resulting solar cells to a power conversion efficiency of below 3%. Here, the performance-limiting factors of this material are investigated in full solar cells featuring various architectures. It is found that the photovoltaic parameters of Cs2AgBiBr6-based solar cells strongly depend on the scan speed of the J/V measurements, suggesting a strong impact of ionic conductivity in the material. Moreover, a sign change of the photocurrent for bias voltages above 0.9 V during the measurement of the external quantum efficiency (EQE) is revealed, which can be explained by non-selective contacts. The radiative loss of the V-OC from sensitive subgap-EQE measurements is calculated and it is revealed that the loss is caused by a low external luminescence yield and therefore a high non-radiative recombination, supported by the first report of a strongly red shifted electroluminescence signal between 800 and 1000 nm. Altogether, these results point to a poor selectivity of the contacts and charge transport layers, caused by poor energy level alignment that can be overcome by optimizing the architecture of the solar cell.
Item Type: | Journal article |
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Faculties: | Chemistry and Pharmacy > Department of Chemistry |
Subjects: | 500 Science > 540 Chemistry |
ISSN: | 2195-1071 |
Language: | English |
Item ID: | 102167 |
Date Deposited: | 05. Jun 2023, 15:39 |
Last Modified: | 17. Oct 2023, 15:10 |