Abstract
We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping lasing emission with distinct s-shaped input-output characteristics, line-width narrowing and emission energies associated with the confined QWs are observed. Comparing the low temperature performance of QW NW laser structures having 7 coaxial QWs with a nominally identical structure having only a single QW shows that the threshold power density reduces several-fold, down to values as low as similar to 2.4 kW/cm(2) for the multiple QW NW laser. This confirms that the individual radial QWs are electronically weakly coupled and that epitaxial design can be used to optimize the gain characteristics of the devices. Temperature-dependent investigations show that lasing prevails up to 300K, opening promising new avenues for efficient III-V semiconductor NW lasers with embedded low-dimensional gain media. (C) 2016 AIP Publishing LLC.
Item Type: | Journal article |
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Faculties: | Chemistry and Pharmacy > Department of Chemistry |
Subjects: | 500 Science > 540 Chemistry |
ISSN: | 0003-6951 |
Language: | English |
Item ID: | 48177 |
Date Deposited: | 27. Apr 2018, 08:14 |
Last Modified: | 04. Nov 2020, 13:25 |