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Richter, M. C.; Mariot, J.-M.; Gafoor, M. A.; Nicolai, L.; Heckmann, O.; Djukic, U.; Ndiaye, W.; Vobornik, I.; Fujii, J.; Barrett, N.; Feyer, V.; Schneider, C. M.; Hricovini, K. (2016): Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface. In: Surface Science, Vol. 651: pp. 147-153
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Abstract

Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra. (C) 2016 Elsevier B.V. All rights reserved.