Schottky Junctions Studied Using Korringa-Kohn-Rostoker Nonequilibrium Green's Function Method

Ogura, Masako und Akai, Hisazumi (2016): Schottky Junctions Studied Using Korringa-Kohn-Rostoker Nonequilibrium Green's Function Method. In: Journal of the Physical Society of Japan, Bd. 85, Nr. 10, 104715

Abstract

A scheme that combines the nonequilibrium Green's function method with the Korringa-Kohn-Rostoker Green's function method is proposed. The method is applied to Schottky junctions composed of an Al/GaN/Al trilayer. The results show that a Schottky barrier is formed at an undoped GaN and Al interface. The transport property of this system under various finite bias voltages is calculated. It is shown that the asymmetric behavior of electron transport against the direction of bias voltage occurs in this system, confirming the feature of rectification.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Chemie und Pharmazie > Department Chemie
• Themengebiete: 500 Naturwissenschaften und Mathematik > 540 Chemie
• ISSN: 0031-9015
• Sprache: Englisch