Abstract
We study strong-field ionization of dielectric nanospheres and focus on the enhancement of the cutoff energies for backscattering electrons resulting from charge interaction. Though recent studies clearly demonstrated the decisive impact of a surface trapping field on the electron backscattering process, a clear picture of the underlying mechanism is lacking. Here, we provide this picture and present a simple and transparent extension of the famous three-step model of strong-field science by adding a triangular surface trapping potential. We justify this model for the case of dielectric nanospheres based on high-level transport simulations. The analysis of the trapping field assisted backscattering provides a universal scaling of the maximal recollision and backscattering energies as 9 U-p and 14.5 U-p, respectively, where U-p is the local ponderomotive potential. The universal nature of the enhancement over the conventional three-step model is of particular interest for the generation of attosecond electron bunches via near-field induced photoemission and high harmonic generation at nanostructures.
Item Type: | Journal article |
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Faculties: | Physics |
Subjects: | 500 Science > 530 Physics |
ISSN: | 0950-0340 |
Language: | English |
Item ID: | 55751 |
Date Deposited: | 14. Jun 2018, 10:00 |
Last Modified: | 04. Nov 2020, 13:36 |