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Monteiro, C. M. B.; Amaro, F. D.; Sousa, M. S.; Abdou-Ahmed, M.; Amaro, P.; Biraben, F.; Chen, T.; Covita, D. S.; Dax, A. J.; Diepold, M.; Fernandes, L. M. P.; Franke, B.; Galtier, S.; Gouvea, A. L.; Götzfried, J.; Graf, T.; Hänsch, T. W.; Hildebrandt, M.; Indelicato, P.; Julien, L.; Kirch, K.; Knecht, A.; Kottmann, F.; Krauth, J. J.; Liu, Y.; Machado, J.; Mulhauser, F.; Naar, B.; Nebel, T.; Nez, F.; Pohl, R.; Santos, J. P.; Santos, J. M. F. dos; Schuhmann, K.; Szabo, C. I.; Taqqu, D.; Veloso, J. F. C. A.; Antognini, A. (2018): On the double peak structure of avalanche photodiode response to monoenergetic x-rays at various temperatures and bias voltages. In: Journal of Instrumentation, Vol. 13, C01033
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Abstract

The double response of a large area avalanche photodiode, a planar RMD model S1315, to 6-keV x-rays was investigated as a function of APD biasing voltage and for different operating temperatures. Our data are consistent with the interpretation that the dissimilar APD response is due to x-ray interactions in the different APD-layer structures;interactions in the APD entrance layer just below the front electrode, where the electric field intensity is very low lead to pulses with higher risetime and lower amplitudes, when compared with interactions in the deeper layers where the electric field is more intense. Average pulse risetime values of 14 and 7 ns have been measured in our setup, the slower pulses presenting average amplitudes which are around 20% lower than those of the faster pulses. While the fast risetime does not depend significantly on APD biasing voltage and on temperature, the slow risetime presents a slight decrease with increasing bias voltage and decreasing temperature, a behaviour that is consistent with the increase of the electric field as a result of the increase in the APD biasing voltage. The fraction of the slow pulses reduces from 60% to 40% as the APD biasing increases from about 1.58 to 1.64 kV, indicating a reduction in the thickness, from 25 to 15 mu m, in the weak-electric-field entrance layer.