Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape

Katsoulis, G. P.; Hadjipittas, A.; Bergues, B.; Kling, M. F. und Emmanouilidou, A. (2018): Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape. In: Physical Review Letters, Bd. 121, Nr. 26, 263203

Abstract

At intensities below the recollision threshold, we show that recollision-induced excitation with one electron escaping fast after recollision and the other electron escaping with a time delay via a Coulomb slingshot motion is one of the most important mechanisms of nonsequential double ionization (NSDI), for strongly driven He at 400 nm. Slingshot NSDI is a general mechanism present for a wide range of low intensities and pulse durations. Anticorrelated two-electron escape is its striking hallmark. This mechanism offers an alternative explanation of anticorrelated two-electron escape obtained in previous studies.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Physik
• Themengebiete: 500 Naturwissenschaften und Mathematik > 530 Physik
• ISSN: 0031-9007
• Sprache: Englisch