Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells

Aygueler, Meltem F.; Hufnagel, Alexander G.; Rieder, Philipp; Wussler, Michael; Jaegermann, Wolfram; Bein, Thomas; Dyakonov, Vladimir; Petrus, Michiel L.; Baumann, Andreas and Docampo, Pablo (2018): Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells. In: ACS Applied Materials & Interfaces, Vol. 10, No. 14: pp. 11414-11419

Abstract

We tune the Fermi level alignment between the SnOx electron transport layer (ETL) and Cs-0.05(FA(0.83)MA(0.17))(0.95)Pb(I0.83Br0.17)(3) and highlight that this parameter is interlinked with current-voltage hysteresis in perovskite solar cells (PSCs). Furthermore, thermally stimulated current measurements reveal that the depth of trap states in the ETL or at the ETL-perovskite interface correlates with Fermi level positions, ultimately linking it to the energy difference between the Fermi level and conduction band minimum. In the presence of deep trap states, charge accumulation and recombination at the interface are promoted, affecting the charge of PSCs.

• Item Type: Journal article
• Research Centers: Center for NanoScience (CENS)
• Subjects: 500 Science > 500 Science
• ISSN: 1944-8244
• Language: English