Abstract
Charge carriers in semiconducting transition metal dichalcogenides possess a valley degree of freedom that allows for optoelectronic applications based on the momentum of excitons. At elevated temperatures, scattering by phonons limits valley polarization, making a detailed knowledge about strength and nature of the interaction of excitons with phonons essential. In this work, we directly access exciton-phonon coupling in charge tunable single layer MoS2 devices by polarization resolved Raman spectroscopy. We observe a strong defect mediated coupling between the long-range oscillating electric field induced by the longitudinal optical phonon in the dipolar medium and the exciton. This so-called Frohlich exciton phonon interaction is suppressed by doping. The suppression correlates with a distinct increase of the degree of valley polarization up to 20% even at elevated temperatures of 220 K. Our result demonstrates a promising strategy to increase the degree of valley polarization towards room temperature valleytronic applications.
Dokumententyp: | Zeitschriftenartikel |
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Fakultät: | Physik |
Fakultätsübergreifende Einrichtungen: | Center for NanoScience (CENS) |
Themengebiete: | 500 Naturwissenschaften und Mathematik > 530 Physik
500 Naturwissenschaften und Mathematik > 500 Naturwissenschaften |
URN: | urn:nbn:de:bvb:19-epub-82492-6 |
ISSN: | 2041-1723 |
Sprache: | Englisch |
Dokumenten ID: | 82492 |
Datum der Veröffentlichung auf Open Access LMU: | 15. Dez. 2021, 15:01 |
Letzte Änderungen: | 27. Jan. 2022, 07:26 |