Abstract
Charge carriers in semiconducting transition metal dichalcogenides possess a valley degree of freedom that allows for optoelectronic applications based on the momentum of excitons. At elevated temperatures, scattering by phonons limits valley polarization, making a detailed knowledge about strength and nature of the interaction of excitons with phonons essential. In this work, we directly access exciton-phonon coupling in charge tunable single layer MoS2 devices by polarization resolved Raman spectroscopy. We observe a strong defect mediated coupling between the long-range oscillating electric field induced by the longitudinal optical phonon in the dipolar medium and the exciton. This so-called Frohlich exciton phonon interaction is suppressed by doping. The suppression correlates with a distinct increase of the degree of valley polarization up to 20% even at elevated temperatures of 220 K. Our result demonstrates a promising strategy to increase the degree of valley polarization towards room temperature valleytronic applications.
| Item Type: | Journal article |
|---|---|
| Faculties: | Physics |
| Research Centers: | Center for NanoScience (CENS) |
| Subjects: | 500 Science > 530 Physics 500 Science > 500 Science |
| URN: | urn:nbn:de:bvb:19-epub-82492-6 |
| ISSN: | 2041-1723 |
| Language: | English |
| Item ID: | 82492 |
| Date Deposited: | 15. Dec 2021 15:01 |
| Last Modified: | 27. Jan 2022 07:26 |
