Rivalry under Pressure: The Coexistence of Ambient-Pressure Motifs and Close-Packing in Silicon Phosphorus Nitride Imide SiP2N4NH

Vogel, Sebastian; Buda, Amalina T. und Schnick, Wolfgang (2019): Rivalry under Pressure: The Coexistence of Ambient-Pressure Motifs and Close-Packing in Silicon Phosphorus Nitride Imide SiP2N4NH. In: Angewandte Chemie-International Edition, Bd. 58, Nr. 11: S. 3398-3401

Abstract

Non-metal nitrides such as BN, Si3N4, and P3N5 meet numerous demands on high-performance materials, and their high-pressure polymorphs exhibit outstanding mechanical properties. Herein, we present the silicon phosphorus nitride imide SiP2N4NH featuring sixfold coordinated Si. Using the multi-anvil technique, SiP2N4NH was obtained by high-pressure high-temperature synthesis at 8 GPa and 1100 degrees C with in situ formed HCl acting as a mineralizer. Its structure was elucidated by a combination of single-crystal X-ray diffraction and solid-state NMR measurements. Moreover, SiP2N4NH was characterized by energy-dispersive X-ray spectroscopy and (temperature-dependent) powder X-ray diffraction. The highly condensed Si/P/N framework features PN4 tetrahedra as well as the rare motif of SiN6 octahedra, and is discussed in the context of ambient-pressure motifs competing with close-packing of nitride anions, representing a missing link in the high-pressure chemistry of non-metal nitrides.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Chemie und Pharmazie > Department Chemie
• Themengebiete: 500 Naturwissenschaften und Mathematik > 540 Chemie
• ISSN: 1433-7851
• Sprache: Englisch