Abstract
We demonstrate lasing from GaAs-InGaAs-based core-multiple quantum well nanowires with lasing emission tunable from similar to 0.8 to similar to 1.1 mu m. By controlling the shell growth temperature, the quantum well In-molar fraction is increased to 25% without plastic relaxation. (C) 2019 The Author(s)
| Item Type: | Journal article |
|---|---|
| Faculties: | Chemistry and Pharmacy > Department of Chemistry |
| Subjects: | 500 Science > 540 Chemistry |
| ISSN: | 2160-9020 |
| Language: | English |
| Item ID: | 83470 |
| Date Deposited: | 15. Dec 2021 15:08 |
| Last Modified: | 15. Dec 2021 15:08 |
