Abstract
Direct printing of nanogap-separated metallic contact pairs is described that enables novel nanoelectronic device architectures. Nanotransfer printing (nTP) stamps are grown by molecular beam epitaxy involving layered III-V semiconductors that are selectively etched. Finished stamps comprise both the nanoscale surface trench that becomes the nanogap on printing and a microscale, predetermined geometry that affords the simultaneous integration of contact pads for external electrical testing. This nTP technique is well suited for top-contacting sensitive thin films for electrical characterization;a typical electrode configuration is illustrated by transfer-printed 13 nm thin metal films that are separated by an electrically insulating gap of ca. 30 nm.
Dokumententyp: | Zeitschriftenartikel |
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Fakultätsübergreifende Einrichtungen: | Center for NanoScience (CENS) |
Themengebiete: | 500 Naturwissenschaften und Mathematik > 500 Naturwissenschaften |
ISSN: | 2166-2746 |
Sprache: | Englisch |
Dokumenten ID: | 84184 |
Datum der Veröffentlichung auf Open Access LMU: | 15. Dez. 2021, 15:10 |
Letzte Änderungen: | 15. Dez. 2021, 15:10 |