Vertical, electrolyte-gated organic transistors show continuous operation in the MA cm(-2) regime and artificial synaptic behaviour

Lenz, Jakob; del Giudice, Fabio; Geisenhof, Fabian R.; Winterer, Felix und Weitz, R. Thomas (2019): Vertical, electrolyte-gated organic transistors show continuous operation in the MA cm(-2) regime and artificial synaptic behaviour. In: Nature Nanotechnology, Bd. 14, Nr. 6

Abstract

Until now, organic semiconductors have failed to achieve high performance in highly integrated, sub-100 nm transistors. Consequently, single-crystalline materials such as single-walled carbon nanotubes, MoS2 or inorganic semiconductors are the materials of choice at the nanoscale. Here we show, using a vertical field-effect transistor design with a channel length of only 40 nm and a footprint of 2 x 80 x 80 nm(2), that high electrical performance with organic polymers can be realized when using electrolyte gating. Our organic transistors combine high on-state current densities of above 3 MA cm(-2), on/off current modulation ratios of up to 10(8) and large transconductances of up to 5,000 S m(-1). Given the high on-state currents at such large on/off ratios, our novel structures also show promise for use in artificial neural networks, where they could operate as memristive devices with sub-100 fJ energy usage.

• Dokumententyp: Zeitschriftenartikel
• Fakultätsübergreifende Einrichtungen: Center for NanoScience (CENS)
• Themengebiete: 500 Naturwissenschaften und Mathematik > 500 Naturwissenschaften
• ISSN: 1748-3387
• Sprache: Englisch