Abstract
We show that the Raman scattering signals of the two dominant Raman bands G and 2D of graphene sensitively depend on the laser intensity in opposite ways. High electronic temperatures reached for pulsed laser excitation lead to an asymmetric Fermi-Dirac distribution at the different optically resonant states contributing to Raman scattering. This results in a partial Pauli blocking of destructively interfering quantum pathways for G band scattering, which is observed as a super-linear increase of the G band intensity with laser power. The 2D band, on the other hand, exhibits sub-linear intensity scaling due to the blocking of constructively interfering contributions. The opposite intensity dependencies of the two bands are found to reduce the observed 2D/G ratio, a key quantity used for characterizing graphene samples, by more than factor two for electronic temperatures around 3000 K.
Dokumententyp: | Zeitschriftenartikel |
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Fakultät: | Chemie und Pharmazie > Department Chemie |
Fakultätsübergreifende Einrichtungen: | Center for NanoScience (CENS) |
Themengebiete: | 500 Naturwissenschaften und Mathematik > 540 Chemie
500 Naturwissenschaften und Mathematik > 500 Naturwissenschaften |
ISSN: | 2040-3364 |
Sprache: | Englisch |
Dokumenten ID: | 89865 |
Datum der Veröffentlichung auf Open Access LMU: | 25. Jan. 2022, 09:33 |
Letzte Änderungen: | 25. Jan. 2022, 09:33 |