A Layered Tin Bismuth Selenide with Three Different Building Blocks that Account for an Extremely Large Lattice Parameter of 283 angstrom

Nentwig, Markus; Eisenburger, Lucien; Heinke, Frank; Souchay, Daniel und Oeckler, Oliver (2020): A Layered Tin Bismuth Selenide with Three Different Building Blocks that Account for an Extremely Large Lattice Parameter of 283 angstrom. In: Chemistry-A European Journal, Bd. 26, Nr. 47: S. 10676-10681

Abstract

The layered compound Sn(2.8(4))Bi(20.2(4))Se(27)exhibits an extraordinarily long-periodic 150Rstacking sequence. The crystal structure contains three different building blocks, which form upon the addition of Sn to a Bi-rich bismuth selenide. Sn-doped Bi(2)double ("2") layers similar to those in elemental bismuth, Sn(0.3)Bi(1.7)Se(3)quintuple ("5") layers and Sn(0.4)Bi(2.6)Se(4)septuple ("7") layers are arranged in a 7525757525|7525757525|7525757525 sequence, which corresponds to a structure witha=4.1819(4) andc=282.64(6) angstrom in space groupR3?m. The structure of a microcrystal was determined using microfocused synchrotron radiation and refined as a formally commensurately modulated structure in (3+1)D superspace (superspace groupR3?m(00 gamma)00), with a trivial basic structure that contains just one atom. The stacking sequence as well as the cation distribution are confirmed by aberration-corrected scanning transmission electron microscopy (STEM) in combination with chemical mapping by X-ray spectroscopy with atomic resolution. Stacking faults are not typical but have been observed occasionally.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Chemie und Pharmazie > Department Chemie
• Themengebiete: 500 Naturwissenschaften und Mathematik > 540 Chemie
• ISSN: 0947-6539
• Sprache: Englisch