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Gille, Peter and Mühlberg, M. and Parthier, L. and Rudolph, P. (1984): Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM. In: Crystal Research and Technology, Vol. 19, No. 7: pp. 881-891
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Abstract

Synthesis and growth of PbTe and (Pb, Sn)Te single crystals by the Bridgman method and by the Travelling Heater Method (THM) from Te-rich solutions are described. It is to be seen from comparative investigations that seeded THM growth reproducibly provides oriented single-crystalline ingots free of low-angle grain boundaries and with etch pit densities of 8-12 × 104 cm-2. All the materials were p-type with carrier concentrations from 1 to 2 × 1018 cm-3.