Abstract
A study was carried out to illustrate that Sb occupies two different sites on Ge(113), one adsorption site saturating three dangling bonds per primitive unit cell and an interstitial site which releases the strain in the [332̄] direction. The bonding of Sb to Ge was found to be stronger than on Ge(100) and (111) surfaces and corresponding Si surfaces. The c(2 x 2) structure was very stable. In particular, very little change upon annealing to 50 K below the melting point of Ge was observed.
Item Type: | Journal article |
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Faculties: | Geosciences > Department of Earth and Environmental Sciences > Crystallography and Materials Science |
Subjects: | 500 Science > 550 Earth sciences and geology |
Language: | English |
Item ID: | 18484 |
Date Deposited: | 10. Mar 2014, 14:09 |
Last Modified: | 29. Apr 2016, 09:15 |