GaAs(001) surface under conditions of low as pressure: evidence for a novel surface geometry

Lee, S.-H.; Moritz, Wolfgang und Scheffler, Matthias (2000): GaAs(001) surface under conditions of low as pressure: evidence for a novel surface geometry. In: Physical Review Letters, Bd. 85, Nr. 18: S. 3890-3893

Abstract

A study is carried out to demonstrate that the (c(8×2) reconstructions of GaAs(001) involves a qualitatively different mechanisms to stabilize the surface. The structure and detailed geometry are shown via DFT calculations.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Geowissenschaften > Department für Geo- und Umweltwissenschaften > Kristallographie und Materialwissenschaft
• Themengebiete: 500 Naturwissenschaften und Mathematik > 550 Geowissenschaften, Geologie
• Sprache: Englisch