Growth of Hg1-xMnxTe crystals by the travelling heater method

Gille, Peter; Rössner, U.; Puhlmann, N.; Niebsch, H. und Piotrowski, T. T. (1995): Growth of Hg1-xMnxTe crystals by the travelling heater method. In: Semiconductor Science and Technology, Bd. 10, Nr. 3: S. 353-357

Abstract

Growth of Hg1-xMnxTe (x approximate to 0.10) crystals by the travellingheater method (THM) is reported using a source material preparationprocess that has been previously developed for Hg1-xCdxTe. Feed ingots,as well as THM single crystals, were characterized with special emphasison the compositional homogeneity that proved to be superior to the usualresults with crystals grown by the Bridgman method so far.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Geowissenschaften > Department für Geo- und Umweltwissenschaften > Kristallographie und Materialwissenschaft
• Themengebiete: 500 Naturwissenschaften und Mathematik > 550 Geowissenschaften, Geologie
• Sprache: Englisch