Abstract
Growth of Hg1-xMnxTe (x approximate to 0.10) crystals by the travellingheater method (THM) is reported using a source material preparationprocess that has been previously developed for Hg1-xCdxTe. Feed ingots,as well as THM single crystals, were characterized with special emphasison the compositional homogeneity that proved to be superior to the usualresults with crystals grown by the Bridgman method so far.
Item Type: | Journal article |
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Faculties: | Geosciences > Department of Earth and Environmental Sciences > Crystallography and Materials Science |
Subjects: | 500 Science > 550 Earth sciences and geology |
Language: | English |
Item ID: | 18696 |
Date Deposited: | 10. Mar 2014, 14:12 |
Last Modified: | 04. Nov 2020, 13:00 |