Gille, Peter; Rössner, U.; Puhlmann, N.; Niebsch, H.; Piotrowski, T. T.
Growth of Hg1-xMnxTe crystals by the travelling heater method.
In: Semiconductor Science and Technology, Vol. 10, Nr. 3: S. 353-357
Volltext auf 'Open Access LMU' nicht verfügbar.
Growth of Hg1-xMnxTe (x approximate to 0.10) crystals by the travellingheater method (THM) is reported using a source material preparationprocess that has been previously developed for Hg1-xCdxTe. Feed ingots,as well as THM single crystals, were characterized with special emphasison the compositional homogeneity that proved to be superior to the usualresults with crystals grown by the Bridgman method so far.