The mechanism of inclusion formation during crystal growth by the travelling heater method

Barz, Ralph-Uwe and Gille, Peter (1995): The mechanism of inclusion formation during crystal growth by the travelling heater method. In: Journal of Crystal Growth, Vol. 149, No. 3-4: pp. 196-200

Abstract

Defects resulting from the crystallization of mother liquid inclusions are a common occurrence in crystals grown by the travelling heater method. The need to distinguish these defects from defects formed by solid-state precipitation is stressed. This paper reports on an investigation of Te inclusions in Cd1-xZnxTe crystals which were grown from Te-rich solution zones and it gives an explanation of the mechanism of their formation by interpreting the composition changes of the matrix surrounding them.

• Item Type: Journal article
• Faculties: Geosciences > Department of Earth and Environmental Sciences > Crystallography and Materials Science
• Subjects: 500 Science > 550 Earth sciences and geology
• Language: English