Influence of the substrate temperature and deposition flux in the growth of a Bi thin film on the ten-fold decagonal Al-Ni-Co surface

Sharma, H. R.; Ledieu, J.; Fournée, V. und Gille, Peter (2011): Influence of the substrate temperature and deposition flux in the growth of a Bi thin film on the ten-fold decagonal Al-Ni-Co surface. In: Philosophical Magazine, Bd. 91, Nr. 19-21: S. 2870-2878

Abstract

We compare the growth of a Bi thin film on the ten-fold surface of the decagonal Al-Ni-Co quasicrystal at different substrate temperatures and fluxes using scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). The growth at 29 K leads to the formation of a quasicrystalline monolayer, consistent with the results obtained at 300 K. Further deposition at low temperature produces pseudocubic islands with 100 surface orientation. The islands have two or four atomic layer heights. Both STM and LEED measurements reveal that there is a transition from the pseudocubic 100 film to the hexagonal 0001 surface orientation at coverage (θ) 4 < θ <6 ML. The hexagonal domains are oriented along the high symmetry directions of the substrate. Growth at room temperature with different fluxes results in different island-height distributions. High flux predominantly produces islands of uniform four-layer high islands, whereas low flux yields islands of varying heights, yielding a rough film morphology. The two-layer high islands are found to be more stable at low temperature than at room temperature.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Geowissenschaften > Department für Geo- und Umweltwissenschaften > Kristallographie und Materialwissenschaft
• Themengebiete: 500 Naturwissenschaften und Mathematik > 550 Geowissenschaften, Geologie
• Sprache: Englisch