Parallel electron-hole bilayer conductivity from electronic interface reconstruction

Pentcheva, Rossitza; Huijben, M.; Otte, Katrin; Pickett, Warren E.; Kleibeuker, J.E.; Huijben, J.; Boschker, H.; Kockmann, D.; Siemons, W.; Koster, G.; Zandvliet, H. J. W.; Rijnders, G.; Blank, D. H. A.; Hilgenkamp, H.; Brinkman, A. (2010): Parallel electron-hole bilayer conductivity from electronic interface reconstruction. In: Physical Review Letters, Vol. 104, No. 16

Abstract

The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO3 capping layer prevents atomic reconstruction at the LaAlO3 surface and triggers the electronic reconstruction at a significantly lower LaAlO3 film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

• Item Type: Journal article
• Faculties: Geosciences > Department of Earth and Environmental Sciences > Crystallography and Materials Science
• Subjects: 500 Science > 530 Physics; 500 Science > 540 Chemistry; 500 Science > 550 Earth sciences and geology
• Language: English