Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM

Gille, Peter; Mühlberg, M.; Parthier, L. und Rudolph, P. (1984): Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM. In: Crystal Research and Technology, Bd. 19, Nr. 7: S. 881-891

Abstract

Synthesis and growth of PbTe and (Pb, Sn)Te single crystals by the Bridgman method and by the Travelling Heater Method (THM) from Te-rich solutions are described. It is to be seen from comparative investigations that seeded THM growth reproducibly provides oriented single-crystalline ingots free of low-angle grain boundaries and with etch pit densities of 8-12 × 104 cm-2. All the materials were p-type with carrier concentrations from 1 to 2 × 1018 cm-3.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Geowissenschaften > Department für Geo- und Umweltwissenschaften > Kristallographie und Materialwissenschaft
• Themengebiete: 500 Naturwissenschaften und Mathematik > 550 Geowissenschaften, Geologie
• Sprache: Englisch