Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM

Gille, Peter; Mühlberg, M.; Parthier, L. and Rudolph, P. (1984): Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM. In: Crystal Research and Technology, Vol. 19, No. 7: pp. 881-891

Abstract

Synthesis and growth of PbTe and (Pb, Sn)Te single crystals by the Bridgman method and by the Travelling Heater Method (THM) from Te-rich solutions are described. It is to be seen from comparative investigations that seeded THM growth reproducibly provides oriented single-crystalline ingots free of low-angle grain boundaries and with etch pit densities of 8-12 × 104 cm-2. All the materials were p-type with carrier concentrations from 1 to 2 × 1018 cm-3.

• Item Type: Journal article
• Faculties: Geosciences > Department of Earth and Environmental Sciences > Crystallography and Materials Science
• Subjects: 500 Science > 550 Earth sciences and geology
• Language: English