Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilation

Krause, R.; Klimakow, A.; Kießling, F. M.; Polity, A.; Gille, Peter und Schenk, M. (1990): Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilation. In: Journal of Crystal Growth, Bd. 101, Nr. 1-4: S. 512-516

Abstract

Positron lifetime measurements have been performed to study vacancy defects in Hg0.78Cd0.22Te. Post-growth annealing under various Hg vapour pressure conditions have been used to create a well-defined number of Hg vacancies. The sensitivity range of the positron annihilation method was found to be 1015 < cHgvac<1018 cm-3. The obtained experience has been used to investigate THM-grown single crystals. The measured longitudinal and radial dependence of the vacancy concentration can be explained by the temperature profile in the grown (Hg,Cd)Te ingots.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Geowissenschaften > Department für Geo- und Umweltwissenschaften > Kristallographie und Materialwissenschaft
• Themengebiete: 500 Naturwissenschaften und Mathematik > 550 Geowissenschaften, Geologie
• Sprache: Englisch