
Abstract
Positron lifetime measurements have been performed to study vacancy defects in Hg0.78Cd0.22Te. Post-growth annealing under various Hg vapour pressure conditions have been used to create a well-defined number of Hg vacancies. The sensitivity range of the positron annihilation method was found to be 1015 < cHgvac<1018 cm-3. The obtained experience has been used to investigate THM-grown single crystals. The measured longitudinal and radial dependence of the vacancy concentration can be explained by the temperature profile in the grown (Hg,Cd)Te ingots.
Item Type: | Journal article |
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Faculties: | Geosciences > Department of Earth and Environmental Sciences > Crystallography and Materials Science |
Subjects: | 500 Science > 550 Earth sciences and geology |
URN: | urn:nbn:de:bvb:19-epub-5570-1 |
Language: | English |
Item ID: | 5570 |
Date Deposited: | 08. Aug 2008, 13:31 |
Last Modified: | 04. Nov 2020, 12:48 |