Structure, Stability, and Origin of (2×n) Phases on Si(100)

Martin, J. A.; Savage, D. E.; Moritz, Wolfgang und Lagally, Max G. (1986): Structure, Stability, and Origin of (2×n) Phases on Si(100). In: Physical Review Letters, Vol. 56, No. 18: pp. 1936-1939

Abstract

Phases with (2×n) structure (6<n<10) can be formed on Si(100) by rapid quenching from high temperatures. The nominal (2×7) phase has been investigated by high-resolution low-energy electron diffraction. The structure involves two atomic levels, is metastable, and decays with first-order kinetics. The structure can be explained by ordering of excess missing-dimer defects, which apparently are present on the surface with any of the standard surface preparation techniques for Si(100).

• Item Type: Journal article
• Faculties: Geosciences > Department of Earth and Environmental Sciences > Crystallography and Materials Science
• Subjects: 500 Science > 550 Earth sciences and geology
• Language: English