Atomic steps on Si(100) surfaces

Martin, J. A.; Aumann, C. E.; Savage, D. E.; Tringides, Michael C.; Lagally, Max G.; Moritz, Wolfgang und Kretschmar, F. (1987): Atomic steps on Si(100) surfaces. In: Journal of Vacuum Science & Technology A, Bd. 5, Nr. 4: S. 615-618

Abstract

It is demonstrated that surface-sensitive electron diffraction measurements of steps on singular, but rough Si(100) surfaces are subject to a multiple-scattering effect that can be misinterpreted as double-atomic-height steps. It is shown that only single-height steps are present. This phenomenon can occur in any surface in which adjacent terraces have different terrace structure factors. Determination of terrace sizes can be influenced; however, they can be accurately made if the diffraction geometry is chosen appropriately. Possible terrace shape effects may also be inherent in the diffraction data.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Geowissenschaften > Department für Geo- und Umweltwissenschaften > Kristallographie und Materialwissenschaft
• Themengebiete: 500 Naturwissenschaften und Mathematik > 550 Geowissenschaften, Geologie
• Sprache: Englisch