Impact of surface roughness on conduction in molecular semiconductors

Riederer, P. ; Bouraoui, M. und Kersting, Roland (2022): Impact of surface roughness on conduction in molecular semiconductors. In: Applied Physics Letters, Bd. 120, Nr. 11, 112103

Abstract

The interface roughness between gate insulator and semiconductor is expected to reduce the conductance of molecular field-effect transistors. This study merges atomic force microscopy data of layer topographies with self-consistent calculations of charge carrier densities and conductances within the channel region. It is found that a roughness equivalent to one monolayer reduces the conductance by nearly 50%. Currents flow mainly within the first monolayer of the semiconductor and along percolation pathways, where charges rarely undergo transfers between adjacent monolayers.

• Dokumententyp: Zeitschriftenartikel
• Fakultät: Physik
• Themengebiete: 500 Naturwissenschaften und Mathematik > 530 Physik
• ISSN: 0003-6951
• Sprache: Englisch
• DFG: Gefördert durch die Deutsche Forschungsgemeinschaft (DFG) - 491502892