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Riederer, P. ORCID logoORCID: https://orcid.org/0000-0001-7519-4856; Bouraoui, M. ORCID logoORCID: https://orcid.org/0000-0003-3494-2920 and Kersting, Roland ORCID logoORCID: https://orcid.org/0000-0001-9169-8683 (2022): Impact of surface roughness on conduction in molecular semiconductors. In: Applied Physics Letters, Vol. 120, No. 11, 112103 [PDF, 2MB]


The interface roughness between gate insulator and semiconductor is expected to reduce the conductance of molecular field-effect transistors. This study merges atomic force microscopy data of layer topographies with self-consistent calculations of charge carrier densities and conductances within the channel region. It is found that a roughness equivalent to one monolayer reduces the conductance by nearly 50%. Currents flow mainly within the first monolayer of the semiconductor and along percolation pathways, where charges rarely undergo transfers between adjacent monolayers.

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