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Gruppiert nach: Dokumententyp | Veröffentlichungsdatum
Anzahl der Publikationen: 6

Zeitschriftenartikel

Doiron, Brock; Gusken, Nicholas A.; Lauri, Alberto; Li, Yi; Mihai, Andrei; Matsui, Takayuki; Bower, Ryan; Huettenhoffer, Ludwig; Regoutz, Anna; Dal Forno, Stefano; Fearn, Sarah; Petrov, Peter K.; Cortes, Emiliano; Cohen, Lesley F.; Afford, Neil M.; Lischner, Johannes; Petrov, Peter; Maier, Stefan A. und Oulton, Rupert F. (2020): Hot carrier optoelectronics with titanium nitride. In: 2020 Conference on Lasers and Electro-Optics (Cleo)

Gusken, Nicholas A.; Lauri, Alberto; Li, Yi; Matsui, Takayuki; Doiron, Brock; Bower, Ryan; Regoutz, Anna; Mihai, Andrei; Petrov, Peter K.; Oulton, Rupert F.; Cohen, Lesley F. und Maier, Stefan A. (2019): TiO2-x-Enhanced IR Hot Carrier Based Photodetection in Metal Thin Film-Si Junctions. In: ACS Photonics, Bd. 6, Nr. 4: S. 953-960

Doiron, Brock; Mota, Monica; Wells, Matthew P.; Bower, Ryan; Mihai, Andrei; Li, Yi; Cohen, Lesley F.; Alford, Neil McN.; Petrov, Peter K.; Oulton, Rupert F. und Maier, Stefan A. (2019): Quantifying Figures of Merit for Localized Surface Plasmon Resonance Applications: A Materials Survey. In: ACS Photonics, Bd. 6, Nr. 2: S. 240-259

Shautsova, Viktoryia; Sidiropoulos, Themistoklis; Xiao, Xiaofei; Gusken, Nicholas A.; Black, Nicola C. G.; Gilbertson, Adam M.; Giannini, Vincenzo; Maier, Stefan A.; Cohen, Lesley F. und Oulton, Rupert F. (2018): Plasmon induced thermoelectric effect in graphene. In: Nature Communications, Bd. 9, 5190 [PDF, 1MB]

Wells, Matthew P.; Bower, Ryan; Kilmurray, Rebecca; Zou, Bin; Mihai, Andrei P.; Gobalakrichenane, Gomathi; Alford, Neil; Oulton, Rupert F. M.; Cohen, Lesley F.; Maier, Stefan A.; Zayats, Anatoly und Petrov, Peter K. (2018): Temperature stability of thin film refractory plasmonic materials. In: Optics Express, Bd. 26, Nr. 12: S. 15726-15744 [PDF, 12MB]

Matsui, Takayuki; Li, Yi; Hsu, Min-Hsiang Mark; Merckling, Clement; Oulton, Rupert F.; Cohen, Lesley F. und Maier, Stefan A. (2018): Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3 Passivation Interface. In: Advanced Functional Materials, Bd. 28, Nr. 17, 1705829

Diese Liste wurde am Sat Dec 21 20:28:43 2024 CET erstellt.